Demonstration of a nonreciprocal multiple-quantum-well structure leading to unidirectional operation of a ring laser

Author

Pulaski, P. ; Diels, J.-C.

Author_Institution

Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

469

Abstract

Summary form only given. We designed a GaAs-AlGaAs MQW ring laser structure that had a zero reflectivity for a beam incident from one side and a nonzero reflectivity (5%) from the other side at a particular value of gain in the quantum wells. Such a structure was grown on a GaAs substrate by molecular beam epitaxy (MBE).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical design techniques; optical fabrication; quantum well lasers; reflectivity; ring lasers; semiconductor growth; GaAs; GaAs substrate; GaAs-AlGaAs; GaAs-AlGaAs MQW ring laser structure design; MBE; QW laser gain; molecular beam epitaxy; nonreciprocal multiple-quantum-well structure; nonzero reflectivity; unidirectional ring laser operation; zero reflectivity; Dielectrics; Laser excitation; Laser theory; Molecular beam epitaxial growth; Optical reflection; Quantum well devices; Reflectivity; Ring lasers; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676507

Filename

676507