Cavity length dependence of gain and linewidth enhancement factor of high-speed 1.55 /spl mu/m MQW laser diode measured from spontaneous emission spectrum

Author

O, Beom-Hoan ; Choo, Heung Ro ; Kim, Hyung Mun ; Kim, Jeong Soo ; Oh, Dae Kon ; Kim, Hye Rim ; Kim, Hong Man ; Pyun, Kwahgn Eui

Author_Institution

Dept. of Electron. Mater. & Devices Eng., Inha Univ., Inchon, South Korea

fYear

1996

fDate

2-7 June 1996

Firstpage

45

Abstract

Summary form only given. The multiquantum-well structure was grown by metal organic vapor phase epitaxy (MOVPE) with InGaAs well layers (30 A thickness) and commensurated 1.24-/spl mu/m InGaAsP-barrier layers (100 A thickness). The semiconducting InP was used for the current blocking layer. The spontaneous emission from the side-wall was measured with optical-multichannel analyser. The gain was calculated from the spontaneous emission spectra.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; laser variables measurement; quantum well lasers; semiconductor device testing; spectral analysis; spontaneous emission; /spl mu/m MQW laser diode; InGaAs well layers; InGaAsP-barrier layers; MOVPE; cavity length dependence; current blocking layer; linewidth enhancement factor; metal organic vapor phase epitaxy; multiquantum-well structure; optical-multichannel analyser; semiconducting InP; side-wall; spontaneous emission; spontaneous emission spectrum; Diode lasers; Epitaxial growth; Epitaxial layers; Gain measurement; Indium gallium arsenide; Indium phosphide; Length measurement; Quantum well devices; Semiconductivity; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864338