Wavelength conversion (/spl sim/14 nm) of 1-Gbit/s signal by a low-temperature grown asymmetric Fabry-Perot all-optical device

Summary form only given. It would be attractive to use a saturable absorber as a practical all-optical gate for bit rate >20 Gbit/s, provided that enough sensitivity could be obtained. We have proposed and demonstrated so far that the coupled cavity configuration allows one to implement a highly sensitive and broadband asymmetric Fabry-Perot all-optical gate for application in ultrahigh-bit-rate optical time-division multiplexing (OTDM). Note that such a device is applicable to wavelength conversion. In this paper, we report its performance evaluation. We show a schematic diagram of a device structure we fabricated. It contains a MBE grown InGaAs-InAlAs MQW saturable absorber, which is sandwiched by SiO/sub 2/-TiO/sub 2/ quarter-wavelength layer stacks (QWLSs).