A silicon nitride optomechanical oscillator with zero flicker noise

Author

Tallur, S. ; Sridaran, S. ; Bhave, S.A.

Author_Institution

OxideMEMS Lab., Cornell Univ., Ithaca, NY, USA

fYear

2012

fDate

Jan. 29 2012-Feb. 2 2012

Firstpage

19

Lastpage

22

Abstract

We present an integrated chip-scale Radiation-Pressure driven Opto-Mechanical Oscillator (RP-OMO) in silicon nitride with excellent close-to-carrier phase noise. We illustrate a process to micro-fabricate optomechanical resonators, waveguides and grating couplers in silicon nitride and demonstrate an RP-OMO operating at 41.95MHz, with phase noise of -85dBc/Hz at 1kHz offset. The phase noise does not show 1/f³ or other higher order slopes all the way down to 10Hz offset from carrier. Using a lower optical quality factor resonance, we demonstrate improvement of 6dB in phase noise.

Keywords

crystal oscillators; crystal resonators; flicker noise; microfabrication; phase noise; radiation pressure; silicon compounds; waveguide couplers; SiN; close-to-carrier phase noise; frequency 1 kHz; frequency 41.95 MHz; grating couplers; integrated chip-scale radiation-pressure driven opto-mechanical oscillator; microfabricated optomechanical resonators; optical quality factor resonance; phase noise; silicon nitride optomechanical oscillator; waveguides; zero flicker noise; Optical coupling; Optical device fabrication; Optical pumping; Optical resonators; Optical waveguides; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on

Conference_Location

Paris

ISSN

1084-6999

Print_ISBN

978-1-4673-0324-8

Type

conf

DOI

10.1109/MEMSYS.2012.6170083

Filename

6170083