Title :
A method and electrical model for the anodic bonding of SOI and glass wafers
Author :
Tatar, E. ; Torunbalci, M.M. ; Alper, S.E. ; Akin, T.
Author_Institution :
METU-MEMS Res. Center, Middle East Tech. Univ., Ankara, Turkey
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
This paper provides a method for the anodic bonding of SOI and glass wafers, and it explains the bonding mechanism with an electrical model, for the first time in the literature. SOI-glass anodic bonding can be achieved at voltages as low as 250 V similar to Si-glass anodic bonding, and the underlying principles can be understood by modeling the overall system with a series-connected capacitor-resistor network. The SOI-oxide layer can be added as a capacitor to the classical anodic bonding model, and the behavior of the bonding can be estimated with the basic circuit theory. The oxide capacitance in the model acts as a short circuit at the time instant when the bonding potential is applied, and then it gradually becomes an open circuit. The model is also successfully adapted to triple stack glass-Si-glass anodic bonding, which enables wafer level packaging and offers many opportunities to MEMS designers.
Keywords :
RC circuits; bonding processes; capacitance; equivalent circuits; glass; micromechanical devices; silicon-on-insulator; wafer level packaging; MEMS designer; SOI oxide layer; SOI wafer; SOI-glass anodic bonding; bonding mechanism; circuit theory; electrical model; glass wafer; oxide capacitance; series connected capacitor-resistor network; triple stack glass-silicon-glass anodic bonding; Bonding; Capacitance; Electric potential; Glass; Integrated circuit modeling; Semiconductor device modeling; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170095
