Variation tolerant logic mapping for crossbar array nano architectures

Bottom-up self-assembly nanofabrication process yields nanodevices with significantly more variations compared to the conventional top-down lithography used in CMOS fabrication. This is in addition to an increased defect density expected for self-assembled nanodevices. Therefore, it is one of the major design challenges to tolerate variation, in addition to defect tolerance, in emerging nano architectures. In this paper, we present a solution for variation tolerant logic mapping for FET based crossbar array nano architectures using Simulated Annealing. Furthermore, we extended the framework for defect tolerance. Experimental results including comparison with exact method confirm the effectiveness of the proposed approach.