Title :
A monolithic 48-stage Si-micromachined Knudsen pump for high compression ratios
Author :
Gupta, N.K. ; An, S. ; Gianchandani, Y.B.
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
This paper describes a microchip of 10.35×11.45 mm2 footprint that can self-evacuate on-chip cavities from 760 Torr to <;50 Torr or from 250 Torr to ≈5 Torr. The power consumed is ≈1,350 mW. These compression ratios of 15 and 50 offer >;10× improvement above those previously reported. The microfabrication process utilizes a single silicon substrate and requires five masks. A process is described for hermetic sealing of plasma enhanced chemical vapor deposited (PECVD) oxide/nitride layers using atomic layer deposited (ALD) Al2O3.
Keywords :
atomic layer deposition; elemental semiconductors; hermetic seals; masks; micromachining; micropumps; plasma CVD; silicon; Si; atomic layer deposition; compression ratios; hermetic sealing; masks; microchip; microfabrication process; monolithic micromachined Knudsen pump; oxide-nitride layers; plasma enhanced chemical vapor deposition; single silicon substrate; Cavity resonators; Creep; Heat pumps; Micropumps; Silicon; Substrates; Thermal conductivity; Knudsen pump; Pirani gauge; Poiseuille flow; compression ratio; sealing; thermal creep flow; thermal transpiration;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170116
