DocumentCode
3546403
Title
Thermal conductivity manipulation in single crystal silicon via lithographycally defined phononic crystals
Author
Kim, Bongsang ; Nguyen, Janet ; Clews, Peggy J. ; Reinke, Charles M. ; Goettler, Drew ; Leseman, Zayd C. ; El-Kady, Ihab ; Olsson, Roy H., III
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
176
Lastpage
179
Abstract
The thermal conductivity of single crystal silicon was engineered to be as low as 32.6W/mK using lithographically defined phononic crystals (PnCs), which is only one quarter of bulk silicon thermal conductivity [1]. Specifically sub-micron through-holes were periodically patterned in 500nm-thick silicon layers effectively enhancing both coherent and incoherent phonon scattering and resulting in as large as a 37% reduction in thermal conductivity beyond the contributions of the thin-film and volume reduction effects. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading to potential performance improvements where heat management is important.
Keywords
elemental semiconductors; lithography; phonon spectra; phononic crystals; silicon; thermal conductivity; Si; lithographically defined phononic crystals; phonon scattering; single crystal silicon; thermal conductivity; thin-film; volume reduction effects; Conductivity; Crystals; Finite element methods; Lattices; Phonons; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170122
Filename
6170122
Link To Document