Silica-based planar optical waveguide devices by TEOS/O/sub 3/ APCVD method

Author

Kitamura, Masayuki ; Kitamura, N. ; Itoh, M.

Author_Institution

Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Kawasaki, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

480

Lastpage

481

Abstract

Summary form only given. We demonstrate that, with our tetraethoxysilane (TEOS)/O/sub 3/ atmospheric pressure (AP) CVD method, metal materials for etching masks and electrical wiring can be formed directly on Si before silica film deposition, which makes this method extremely attractive for highly functional hybrid-integrated optical modules. Hybrid-integrated optical transceivers and SOA gate matrix switches have been demonstrated with this method.

Keywords

chemical vapour deposition; etching; integrated optoelectronics; modules; optical fabrication; optical planar waveguides; optical receivers; optical transmitters; semiconductor lasers; silicon compounds; transceivers; O/sub 3/; SOA gate matrix switches; TEOS/O/sub 3/ APCVD method; atmospheric pressure CVD method; electrical wiring; etching masks; highly functional hybrid-integrated optical modules; hybrid-integrated optical transceivers; metal materials; silica film deposition; silica-based planar optical waveguide devices; tetraethoxysilane; Atmospheric waves; Etching; Inorganic materials; Optical devices; Optical films; Optical materials; Optical planar waveguides; Optical waveguides; Planar waveguides; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676523

Filename

676523