Title :
High aspect ratio deep silicon etching
Author :
Owen, K.J. ; VanDerElzen, B. ; Peterson, R.L. ; Najafi, K.
Author_Institution :
Center for Wireless Integrated Microsyst., Univ. of Michigan, Ann Arbor, MI, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
This paper reports an improved deep reactive ion etching (DRIE) process for ultra high aspect ratio silicon trenches with reduced undercut. By ramping process pressure, etch power, and switching time, we are able to produce 5.7 μm trenches with an aspect ratio of 70 and 3 μm trenches with an aspect ratio of 97. We reduce undercut by half by adjusting the length and pressure of the passivation step.
Keywords :
micromechanical devices; sputter etching; DRIE process; deep reactive ion etching; deep silicon etching; etch power; high aspect ratio; ramping process pressure; switching time; Etching; Gases; Ions; Metals; Passivation; Plasmas; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170138
