DocumentCode
3546470
Title
High aspect ratio deep silicon etching
Author
Owen, K.J. ; VanDerElzen, B. ; Peterson, R.L. ; Najafi, K.
Author_Institution
Center for Wireless Integrated Microsyst., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
251
Lastpage
254
Abstract
This paper reports an improved deep reactive ion etching (DRIE) process for ultra high aspect ratio silicon trenches with reduced undercut. By ramping process pressure, etch power, and switching time, we are able to produce 5.7 μm trenches with an aspect ratio of 70 and 3 μm trenches with an aspect ratio of 97. We reduce undercut by half by adjusting the length and pressure of the passivation step.
Keywords
micromechanical devices; sputter etching; DRIE process; deep reactive ion etching; deep silicon etching; etch power; high aspect ratio; ramping process pressure; switching time; Etching; Gases; Ions; Metals; Passivation; Plasmas; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170138
Filename
6170138
Link To Document