Title :
Inductively coupled plasma etching of bulk molybdenum
Author :
Hu, J. ; Zhang, Y. ; Chen, S. ; He, S. ; Li, N. ; Chen, J.
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
Molybdenum is a promising material for bulk MEMS applications for its high melting point, radiation resistance, high strength and conductivity. This paper reports on the development of wafer level bulk molybdenum ICP etching. Various etching chemistry are explored. The influence of process parameters (coil power/ICP power, platen power/RIE power and gas flow rate) on the etching rate, selectivity to SU-8 mask and etching profile anisotropy are investigated. With an optimized recipe, an etching rate of 2.63μm/min has been achieved with a profile of 70° and samples are employed as electrodes in micro Electrical Discharge Machining (μEDM).
Keywords :
electrical discharge machining; micromachining; micromechanical devices; sputter etching; μEDM; MEMS; conductivity; inductively coupled plasma etching; micro electrical discharge machining; radiation resistance; wafer level bulk molybdenum ICP etching; Anisotropic magnetoresistance; Chemistry; Electrodes; Etching; Iterative closest point algorithm; Substrates; Sulfur hexafluoride;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170142
