Title :
Microplasma field effect transistors
Author :
Yuan, Wen ; Chowdhury, Faisal K. ; Tabib-Azar, Massood
Author_Institution :
Univ. of Utah, Salt Lake City, UT, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
We report, for the first time, a new class of microplasma FET (MOPFET) devices that operate at atmospheric pressure helium. MOPFET are similar to MOSFETs but instead of using electrons and holes in semiconducting active channels, they use ions and electrons in gaseous channels to control channel conduction. Their applications include processing devices for very high temperature and high ionizing radiation environment and they may find use in engine sensors and diagnostic circuits. The plasma for our devices is supplied by an RF probe operating at frequencies ranging from 400 MHz to 700 MHz. DC and RF microplasmas are widely used in displays, medical applications, optical spectroscopic analysis, nanomaterial synthesis, etc.
Keywords :
field effect transistors; MOPFET; MOSFET; atmospheric pressure helium; channel conduction; diagnostic circuits; electrons; engine sensors; gaseous channels; ions; microplasma FET; microplasma field effect transistors; nanomaterial synthesis; optical spectroscopic analysis; semiconducting active channels; Electrodes; FETs; Logic gates; Optical switches; Plasmas; Radio frequency;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170152