• DocumentCode
    3546523
  • Title

    Microplasma field effect transistors

  • Author

    Yuan, Wen ; Chowdhury, Faisal K. ; Tabib-Azar, Massood

  • Author_Institution
    Univ. of Utah, Salt Lake City, UT, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    We report, for the first time, a new class of microplasma FET (MOPFET) devices that operate at atmospheric pressure helium. MOPFET are similar to MOSFETs but instead of using electrons and holes in semiconducting active channels, they use ions and electrons in gaseous channels to control channel conduction. Their applications include processing devices for very high temperature and high ionizing radiation environment and they may find use in engine sensors and diagnostic circuits. The plasma for our devices is supplied by an RF probe operating at frequencies ranging from 400 MHz to 700 MHz. DC and RF microplasmas are widely used in displays, medical applications, optical spectroscopic analysis, nanomaterial synthesis, etc.
  • Keywords
    field effect transistors; MOPFET; MOSFET; atmospheric pressure helium; channel conduction; diagnostic circuits; electrons; engine sensors; gaseous channels; ions; microplasma FET; microplasma field effect transistors; nanomaterial synthesis; optical spectroscopic analysis; semiconducting active channels; Electrodes; FETs; Logic gates; Optical switches; Plasmas; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170152
  • Filename
    6170152