DocumentCode
3546523
Title
Microplasma field effect transistors
Author
Yuan, Wen ; Chowdhury, Faisal K. ; Tabib-Azar, Massood
Author_Institution
Univ. of Utah, Salt Lake City, UT, USA
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
293
Lastpage
296
Abstract
We report, for the first time, a new class of microplasma FET (MOPFET) devices that operate at atmospheric pressure helium. MOPFET are similar to MOSFETs but instead of using electrons and holes in semiconducting active channels, they use ions and electrons in gaseous channels to control channel conduction. Their applications include processing devices for very high temperature and high ionizing radiation environment and they may find use in engine sensors and diagnostic circuits. The plasma for our devices is supplied by an RF probe operating at frequencies ranging from 400 MHz to 700 MHz. DC and RF microplasmas are widely used in displays, medical applications, optical spectroscopic analysis, nanomaterial synthesis, etc.
Keywords
field effect transistors; MOPFET; MOSFET; atmospheric pressure helium; channel conduction; diagnostic circuits; electrons; engine sensors; gaseous channels; ions; microplasma FET; microplasma field effect transistors; nanomaterial synthesis; optical spectroscopic analysis; semiconducting active channels; Electrodes; FETs; Logic gates; Optical switches; Plasmas; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170152
Filename
6170152
Link To Document