Terahertz emission from electric field singularities in biased semiconductors

Author

Brener, Igal ; Frommer, A. ; Pfeiffer, Loren ; West, Ken

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

83

Lastpage

84

Abstract

Summary form only given. Fast electrical transients and terahertz (THz) radiation are generated when biased coplanar striplines are excited within the gap by short laser pulses. This generation process is particularly efficient when the excitation is carried out close to the anode and has been observed in a number of material systems. In this work we go one step further and use electric field singularities in metal-semiconductor microstructures to generate efficient THz radiation and electrical transients.

Keywords

anodes; coplanar waveguides; electro-optical effects; electromagnetic wave propagation; laser beam effects; microwave generation; semiconductor-metal boundaries; strip lines; submillimetre wave measurement; GaAs; THz radiation generation; anode; biased coplanar stripline excitation; biased semiconductors; efficient THz radiation; electric field singularities; electrical transients; fast electrical transients; material systems; metal-semiconductor microstructures; terahertz emission; Charge carrier density; Conductivity; Density measurement; Electrons; Focusing; Gallium arsenide; Molecular beam epitaxial growth; Position measurement; Semiconductor device doping; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864390