Title :
Terahertz pulse probing of metal-oxide-semiconductor inversion layers
Author :
Son, Junggab ; Jeong, Sangkwon ; Budiarto, E. ; Bokor, Jozsef
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Summary form only given. Femtosecond-laser-driven terahertz (THz) electromagnetic pulses have been used to study the carrier transport dynamics of bulk semiconductors and modulation-doped GaAs quantum wells by observing absorption spectra. Using a Drude fit to the absorption measurement results, carrier density and mobility have been obtained. We apply this technique to non-contact investigation of the carrier dynamics of metal-oxide-semiconductor (MOS) inversion layers. The inversion layer mobility is typically obtained through the drain current measurements versus drain voltage for a given gate voltage. This method therefore requires a full MOS transistor structure, including source and drain. The THz technique only requires a simple MOS capacitor to determine the mobility.
Keywords :
MIS devices; carrier density; carrier mobility; inversion layers; Drude fit; MOS capacitor; MOS transistor; absorption spectra; carrier density; carrier mobility; carrier transport dynamics; femtosecond-laser-driven electromagnetic pulse; metal-oxide-semiconductor inversion layer; noncontact measurement; terahertz pulse probing; Charge carrier density; Current measurement; Density measurement; EMP radiation effects; Electromagnetic measurements; Electromagnetic wave absorption; Epitaxial layers; Gallium arsenide; Pulse modulation; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2