• DocumentCode
    3546689
  • Title

    Initiation of nanoporous energetic silicon by optically-triggered, residual stress powered microactuators

  • Author

    Morris, Christopher J. ; Laflin, Kate E. ; Churaman, Wayne A. ; Becker, Collin R. ; Currano, Luke J. ; Gracias, David H.

  • Author_Institution
    Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    1245
  • Lastpage
    1248
  • Abstract
    The integration of energetic materials with chip-scale MEMS fabrication processes, and in particular the development of nanoporous energetic silicon (NES), is a promising path to provide significant quantities of energy for certain microscale applications. Here we demonstrate the low-power wireless initiation of an on-chip energetic reaction, by absorbing optical energy, transmitting mechanical energy, and releasing a large amount of chemical energy, without the use of any external wires or batteries. A novel actuator powered by residual thin film stress absorbed 25 W/cm2 of optical power from a 532 nm visible laser, heated, and released up to 22 nJ of mechanical energy. The mechanical energy was sufficient to initiate 6.7 mg of NES and release up to 66 J of chemical energy.
  • Keywords
    elemental semiconductors; internal stresses; micro-optomechanical devices; microactuators; microfabrication; nanoporous materials; silicon; Si; chemical energy; chip-scale MEMS fabrication processes; low-power wireless initiation; mechanical energy; nanoporous energetic silicon materials; on-chip energetic reaction; optical energy; optically-triggered residual stress powered microactuators; residual thin film stress; visible laser; wavelength 532 nm; Actuators; Fasteners; Grippers; Measurement by laser beam; Optical films; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170199
  • Filename
    6170199