A 36-V H-bridge driver interface in a standard 0.35-μm CMOS process

This paper describes a CMOS H-bridge driver developed as part of a system-on-chip solution. It is designed for H-bridges whose switch elements are comprised of N-channel MOSFET to drive DC-motors with up to 24-V supply. The circuit consists of two high side drivers, two low side drivers and a charge pump. The drivers´ PWM operation frequency is up to 50 kHz and is controlled by 8 digital IO, enabling variable cross conduction protection delay for external MOSFET and internal push-pull configuration. Bridge motor nodes are monitored by comparators to detect short circuits to ground or V_CC. The circuit is fabricated in a 0.35-μm standard CMOS process with high-voltage module. The die area is 2.5 mm² including charge pump and pads. Typical power dissipation at 25 kHz PWM operation and 15nF MOSFET gate load is 9.6 mA @ 13 V.