A 36-V H-bridge driver interface in a standard 0.35-μm CMOS process

Author

Krenzke, Rainer ; Ji, Cang ; Killat, Dirk

Author_Institution

Dialog Semicond., Kirchheim-Teck, Germany

fYear

2005

fDate

23-26 May 2005

Firstpage

3651

Abstract

This paper describes a CMOS H-bridge driver developed as part of a system-on-chip solution. It is designed for H-bridges whose switch elements are comprised of N-channel MOSFET to drive DC-motors with up to 24-V supply. The circuit consists of two high side drivers, two low side drivers and a charge pump. The drivers´ PWM operation frequency is up to 50 kHz and is controlled by 8 digital IO, enabling variable cross conduction protection delay for external MOSFET and internal push-pull configuration. Bridge motor nodes are monitored by comparators to detect short circuits to ground or V_CC. The circuit is fabricated in a 0.35-μm standard CMOS process with high-voltage module. The die area is 2.5 mm² including charge pump and pads. Typical power dissipation at 25 kHz PWM operation and 15nF MOSFET gate load is 9.6 mA @ 13 V.

Keywords

CMOS integrated circuits; DC motors; comparators (circuits); driver circuits; power MOSFET; power integrated circuits; pulse width modulation; short-circuit currents; system-on-chip; 0.35 micron; 13 V; 15 nF; 25 kHz; 36 V; 9.6 mA; CMOS process; DC-motors; H-bridge driver interface; N-channel MOSFET; PWM operation frequency; bridge motor nodes; charge pump; comparators; high side drivers; high-voltage module; internal push-pull configuration; low side drivers; short circuit detection; system-on-chip; variable cross conduction protection delay; CMOS process; Charge pumps; Digital control; Driver circuits; Frequency; MOSFET circuits; Protection; Pulse width modulation; Switches; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465421

Filename

1465421