• DocumentCode
    3546735
  • Title

    A balanced measurement and characterization technique for thermal-piezoresistive micromechanical resonators

  • Author

    Chen, Cheng-Chi ; Yu, Huan-Tse ; Li, Sheng-Shian

  • Author_Institution
    Inst. of Nano Eng. & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    377
  • Lastpage
    380
  • Abstract
    A novel balanced two-port measurement technique capable of adjusting feedthrough signal has been proposed to demonstrate both cancellation and tuning of feedthrough levels for one-port thermally actuated resonator with piezoresistive sensing (thermal-piezoresistive resonator), therefore attaining clean frequency spectra and real resonance characterization. Conventional one-port thermal-piezoresistive resonators significantly suffer high transmission feedthrough and often necessitate post-data processing and de-embedding to extract pure resonance behavior. For the first time, the one-port thermal-piezoresistive resonators with longitudinally vibrating mode shape were tested using the proposed technique to offer the directly measurable resonator Q, motional impedance, and resonance frequency with an improvement of around 80 dB feedthrough reduction. This approach could be easily applied to any one-port thermal-piezoresistive resonator with much higher frequency, showing great potential to enable future sensor and RF applications.
  • Keywords
    electric impedance; micromechanical resonators; piezoresistive devices; feedthrough signal; motional impedance; one port thermally actuated resonator; piezoresistive sensing; resonance frequency; thermal piezoresistive micromechanical resonators; two port measurement technique; Fixtures; Floors; Frequency measurement; Optical resonators; Resonant frequency; Sensors; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170212
  • Filename
    6170212