DocumentCode
3546751
Title
A 0.8V ΔΣ modulator using DTMOS technique
Author
Maymandi-Nejad, Mohammad ; Sachdev, Manoj
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear
2005
fDate
23-26 May 2005
Firstpage
3684
Abstract
A 0.8V second order ΔΣ modulator is designed in 0.18 μm bulk CMOS technology. The dynamic threshold MOSFET (DTMOS) technique is used to enhance the performance of the circuit building blocks at very low supply voltage. Schematic and post layout simulation results are provided. In case of the amplifier with the embedded CMFB, the measurement results are presented. The modulator can achieve a SNR of approximately 80dB with an oversampling ratio (OSR) of 200 and consumes a power of 460 μW.
Keywords
CMOS integrated circuits; amplifiers; delta-sigma modulation; sampling methods; 0.18 micron; 0.8 V; 460 muW; DTMOS technique; amplifier; bulk CMOS technology; circuit building blocks; delta sigma modulator; dynamic threshold MOSFET; low supply voltage; oversampling ratio; performance; Batteries; Biomedical measurements; CMOS technology; Circuit simulation; Low voltage; MIM capacitors; MOS capacitors; MOSFETs; Switches; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465429
Filename
1465429
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