DocumentCode
3546753
Title
Evaluation of anodic TA2 O5 as the dielectric layer for EWOD devices
Author
Huang, Lian-Xin ; Koo, Bonhye ; Kim, Chang-Jin CJ
Author_Institution
Univ. of California, Los Angeles, CA, USA
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
428
Lastpage
431
Abstract
We report that anodic tantalum pentoxide (Ta2O5) exhibits severe polarity and frequency dependencies that, when used as the dielectric material for electrowetting on dielectric (EWOD) devices, in many cases result in long-term performance that is worse than when conventional dielectrics (e.g., SiO2) are used. This rather disappointing news is nevertheless relevant to the community and calls for critical assessment. Here, we find that under direct current (DC) actuation Ta2O5 is attractive for EWOD only if the droplet is negatively biased, and that under alternating current (AC) it is acceptable only for low frequencies.
Keywords
anodisation; dielectric materials; EWOD devices; SiO2; Ta2O5; anodic tantalum pentoxide; dielectric device; dielectric layer; dielectric material; direct current actuation; electrowetting; frequency dependency; severe polarity; Dielectric constant; Electrochemical processes; Films; Micromechanical devices; Performance evaluation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170218
Filename
6170218
Link To Document