• DocumentCode
    3546753
  • Title

    Evaluation of anodic TA2O5 as the dielectric layer for EWOD devices

  • Author

    Huang, Lian-Xin ; Koo, Bonhye ; Kim, Chang-Jin CJ

  • Author_Institution
    Univ. of California, Los Angeles, CA, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    428
  • Lastpage
    431
  • Abstract
    We report that anodic tantalum pentoxide (Ta2O5) exhibits severe polarity and frequency dependencies that, when used as the dielectric material for electrowetting on dielectric (EWOD) devices, in many cases result in long-term performance that is worse than when conventional dielectrics (e.g., SiO2) are used. This rather disappointing news is nevertheless relevant to the community and calls for critical assessment. Here, we find that under direct current (DC) actuation Ta2O5 is attractive for EWOD only if the droplet is negatively biased, and that under alternating current (AC) it is acceptable only for low frequencies.
  • Keywords
    anodisation; dielectric materials; EWOD devices; SiO2; Ta2O5; anodic tantalum pentoxide; dielectric device; dielectric layer; dielectric material; direct current actuation; electrowetting; frequency dependency; severe polarity; Dielectric constant; Electrochemical processes; Films; Micromechanical devices; Performance evaluation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170218
  • Filename
    6170218