Title :
Geothermal environmental exposure testing of encapsulant and device materials for harsh environment MEMS sensors
Author :
Wodin-Schwartz, S. ; Cheng, J.C. ; Senesky, D.G. ; Hammer, J.E. ; Pisano, A.P.
Author_Institution :
Univ. of California at Berkeley, Berkeley, CA, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
The development of harsh environment sensors for down hole geothermal well monitoring is needed to both optimize current production wells and to develop more accurate subsurface mapping to reduce the cost of well exploration. Exposure testing of encapsulant and device materials must be conducted within harsh environments to determine material survivability in the well bore environment. Mass change and sputter XPS chemical analysis were conducted on silicon, sapphire, silicon carbide (SiC), and aluminum nitride (AlN) after up to 100 hours of exposure testing in water at its critical point.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; aluminium compounds; chemical analysis; critical points; elemental semiconductors; geophysical equipment; geotechnical engineering; materials testing; microsensors; sapphire; silicon; silicon compounds; sputter deposition; wide band gap semiconductors; Al2O3; AlN; Si; SiC; current production wells optimization; device materials testing; down hole geothermal well monitoring; encapsulant testing; geothermal environmental exposure testing; harsh environment MEMS sensors; mass change; material survivability; sputter XPS chemical analysis; subsurface mapping; water exposure testing; well bore environment; Degradation; Nickel; Silicon; Silicon carbide; Temperature sensors;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170219
