Title :
Microchip laser range finder
Author :
Fulbert, L. ; Accomo, R. ; Molva, E. ; Besesty, P. ; Mouttet, A.
Author_Institution :
LETI CEA-Technol., Grenoble, France
Abstract :
Summary form only given. We use pulses generated from a passively Q-switched 1.06-/spl mu/m YAG:Nd microchip laser for time-of-flight range-finding measurements. Passive Q-switching is obtained with a thin-film YAG:Cr/sup 4+/ saturable absorber grown by liquid phase epitaxy on a YAG:Nd substrate. The microchip is pumped by a cw diode laser emitting at 808 nm. In our configuration, the pulse energy is 1 /spl mu/J, the pulse width 750 ps, and the repetition rate 10 kHz. The laser beam is diffraction limited single-mode TEM/sub 00/.
Keywords :
Q-switching; laser ranging; neodymium; solid lasers; YAG:Nd; YAG:Nd microchip laser; YAl5O12:Nd; diode laser pumping; passive Q-switching; pulsed laser; range finder; time-of-flight measurement; Diode lasers; Epitaxial growth; Laser excitation; Microchip lasers; Optical pulse generation; Pulse measurements; Pump lasers; Space vector pulse width modulation; Substrates; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
