Title :
Lorentz force MOS transistor
Author :
Gabara, Thaddeus
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A new set of terminals has been introduced to control the behavior of an MOS device. A magnetic field, formed when current flows through an on-chip coil, is applied to the inversion layer of an MOS device. The generated Lorentz force is applied to the carriers in the inversion layer to alter the characteristics of the MOS device. The magnetic field is applied parallel to the inversion layer and perpendicular to the carrier flow. Measurement results using this structure as a 1.8 GHz mixer are given. Measurements demonstrate that the interaction between the coil and the MOS device is primarily due to the Lorentz force. The capacitive coupling effect between the coil and the device plays a minor role
Keywords :
Hall effect devices; MOSFET; UHF mixers; coils; inductors; inversion layers; 1.8 GHz; Hall effect device; Lorentz force; MOS transistor; capacitive coupling effect; coil; inversion layer; magnetic field; mixer; on-chip inductors; Coils; Frequency; Inductors; Lorentz covariance; MOS devices; MOSFETs; Magnetic field measurement; Magnetic fields; Silicon; Threshold voltage;
Conference_Titel :
ASIC Conference and Exhibit, 1997. Proceedings., Tenth Annual IEEE International
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-4283-6
DOI :
10.1109/ASIC.1997.617024
