DocumentCode
3546839
Title
Package-induced temperature dependence of MEMS capacitive strain sensor and system design considerations
Author
Young, Darrin J. ; Suster, Michael A. ; Ko, Wen H.
Author_Institution
Univ. of Utah, Salt Lake City, UT, USA
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
583
Lastpage
586
Abstract
MEMS capacitive strain sensors are attractive for a wide range of industrial sensing applications due to their high sensitivity, large dynamic range and low temperature dependence. However, after sensors packaging and attachment to a targeted metallic surface, the overall sensing system can exhibit a substantial package-induced temperature dependence caused by different thermal expansion coefficients of silicon, metallic surface and bonding adhesives, thus degrading overall performance. Temperature characterization from -20°C to 150°C of prototype strain sensing modules attached on a stainless steel surface reveals a temperature dependence of -6.2 με/°C. As a results, an increased dynamic range of the sensing electronics are required at the expense of an increased system supply voltage as well as power dissipation. A careful system characterization over the operating temperature range and optimized system design considerations are, therefore, critical for achieving stringent performance requirements.
Keywords
adhesive bonding; capacitive sensors; elemental semiconductors; microsensors; silicon; stainless steel; strain sensors; thermal expansion; MEMS capacitive strain sensors; Si; adhesive bonding; industrial sensing applications; metallic surface; package-induced temperature dependence; power dissipation; prototype strain sensing modules; sensors packaging; stainless steel surface; stringent performance requirements; temperature -20 degC to 150 degC; thermal expansion coefficients; Micromechanical devices; Sensitivity; Strain; Temperature dependence; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170242
Filename
6170242
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