• DocumentCode
    3546863
  • Title

    Electrowetting on flexible, transparent and conducting single-layer graphene

  • Author

    Tan, X.B. ; Yang, J. ; Zeng, P. ; Kim, E.G.R. ; Huard, C. ; Cheng, M.M.C.

  • Author_Institution
    Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    1037
  • Lastpage
    1040
  • Abstract
    This paper reports the results of using graphene as a novel electrode material in the experiment of electrowetting on dielectric (EWOD). The device has a Teflon layer coated CVD graphene electrode which is patterned on transparent and flexible substrates such as PET films. By applying a potential difference between a liquid droplet and a graphene electrode, we observed a change in contact angle from 117° to 86° as the voltage is increased from 0V to 40V. We also demonstrated reversible electrowetting. By utilizing graphene as an electrode material we have achieved high breakdown voltage, transparency and flexibility, all of which will be beneficial for future applications such as flexible display technology and cell manipulation.
  • Keywords
    Young´s modulus; chemical vapour deposition; conducting materials; contact angle; drops; electric breakdown; electrical conductivity; electrochemical electrodes; fullerene devices; graphene; thin films; transparency; wetting; yield strength; C; CVD graphene electrode; PET films; Teflon layer; Young´s modulus; breakdown voltage; chemical vapour deposition; conducting single-layer graphene; contact angle; dielectric device; electrical conductivity; flexible substrates; flexible-single-layer graphene; liquid droplet; reversible electrowetting; transparency; transparent single-layer graphene; voltage 0 V to 40 V; yield strength; Dielectrics; Electrodes; Gold; Optical films; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170248
  • Filename
    6170248