Title :
High-stiffness-driven micromechanical resonator oscillator with enhanced phase noise performance
Author :
Hou, Li-Jen ; Chen, Wen-Chien ; Li, Cheng-Syun ; Li, Sheng-Shian
Author_Institution :
Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
A two-port micromechanical beam resonator driven by its high stiffness locations has been used to enable a series-resonant resonator oscillator, for the first time, with enhanced power handling and phase noise performance as compared with the same resonator design but using low-stiffness driving configuration. The key to attaining better power handling capability relies on driving electrode arrangement where critical handling power becomes much larger by driving the resonator at its high-stiffness locations than low-stiffness areas since power handling of a resonator is proportional to its effective stiffness. With 16.9X improvement on power handling capability for a 9.7-MHz beam resonator via the proposed high-stiffness driving concept, a MEMS-based oscillator referenced to it greatly benefit from power handling enhancement, therefore leading to 26.5 dB reduction in far-from-carrier phase noise as compared to its low-stiffness driving counterpart.
Keywords :
micromechanical resonators; oscillators; phase noise; carrier phase noise; high stiffness driven micromechanical resonator oscillator; low stiffness driving configuration; phase noise performance; power handling; series resonant resonator oscillator; Electrodes; Optical resonators; Phase noise; Resonant frequency; Sensors; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170283