• DocumentCode
    3547035
  • Title

    Thermally actuated I-shaped electromechanical VHF resonators

  • Author

    Hall, H.J. ; Rahafrooz, A. ; Brown, J.J. ; Bright, V.M. ; Pourkamali, S.

  • Author_Institution
    Univ. of Colorado at Boulder, Boulder, CO, USA
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    737
  • Lastpage
    740
  • Abstract
    Fabrication and characterization results are presented for the highest frequency (112-176 MHz) and smallest footprint (area: ~70 μm2) thermal-piezoresistive single crystal silicon (SCS) resonators yet reported. The devices in this work have similar I-shaped or dumbbell geometry as previous work but with considerably smaller dimensions. An SOIMEMS fabrication process was developed that employs electron beam lithography to achieve submicron dimensions. Strong performance (Q = 5750, gm = 89.6 μA/V) is demonstrated, as is frequency tunability (up to 3.6% in vacuum) via DC bias current adjustment. Simple geometry and fabrication make these devices useful alternatives to capacitive and piezoelectric resonators.
  • Keywords
    crystal resonators; piezoresistive devices; resonators; silicon; DC bias current adjustment; SOIMEMS fabrication process; Si; capacitive resonators; dumbbell geometry; electron beam lithography; frequency 112 MHz to 176 MHz; piezoelectric resonators; thermal-piezoresistive single crystal silicon resonators; thermally actuated I-shaped electromechanical VHF resonators; Actuators; Current measurement; Fabrication; Performance evaluation; Piezoresistance; Resonant frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170291
  • Filename
    6170291