Title :
Integrated fluorescent analysis system with monolithic GaN light emitting diode on Si platform
Author :
Nakazato, H. ; Kawaguchi, H. ; Iwabuchi, A. ; Hane, K.
Author_Institution :
Tohoku Univ., Sendai, Japan
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
A GaN blue light emitting diode (LED) integrated monolithically on a Si substrate is used as a fluorescent light source of bio-fluidic micro total analysis system (μTAS) with polydimethylsiloxane (PDMS) channel. A Si photodiode (Si PD) is also installed on a Si substrate for fluorescent detection. Therefore, all basic optical components necessary for fluorescent μTAS are integrated on a Si platform. A GaN LED layer on a Si substrate is micromachined by etching the Si substrate to generate a ring-shaped light source for a dark-illumination optical configuration. The blue emission at the wavelength of 477nm suits the excitation of the fluorescent dye of fluorescein isothiocyanate (FITC). Using the integrated chip, the fluorescent emission form a flowing fluid with the dye is measured as a function of the concentration. The noise, sensitivity and detection limit are evaluated to be 0.57pA, 1.21pA/μM and 469nM, respectively.
Keywords :
biological techniques; etching; fluorescence spectroscopy; lab-on-a-chip; light emitting diodes; light sources; microfluidics; micromachining; μTAS; FITC; GaN-Si; LED; PDMS; biofluidic micro total analysis system; dark illumination optical configuration; etching; fluorescein isothiocyanate; fluorescent dye; fluorescent light source; integrated chip; integrated fluorescent analysis system; micromachining; monolithic light emitting diode; polydimethylsiloxane channel; ring shaped light source; Fluorescence; Gallium nitride; Light emitting diodes; Photodiodes; Sensitivity; Silicon; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170317