DocumentCode :
3547344
Title :
Microfabricated silicon carbide thermionic energy converter for solar electricity generation
Author :
Lee, Jae Hyung ; Bargatin, Igor ; Gwinn, Thomas O. ; Vincent, Maxime ; Littau, Karl A. ; Maboudian, Roya ; Shen, Z.-X. ; Melosh, Nicholas A. ; Howe, Roger T.
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2012
fDate :
Jan. 29 2012-Feb. 2 2012
Firstpage :
1261
Lastpage :
1264
Abstract :
This paper reports an initial prototype for microfabricated silicon carbide (SiC) thermionic energy converters (TECs), which have promise as topping stages for solar thermal electricity generation. Our initial TEC device achieved cathode temperatures of over 2000 K with incident optical intensity of approximately 1 W/mm2 (equivalent to 1000 Suns), remained structurally stable under thermal cycling, and maintained a temperature difference between the cathode and the anode of over 1000 K. In addition, our device converted the estimated 0.1 W of optical power incident on the cathode to 0.12 nW of electrical power. The low conversion efficiency is due to the high work function of SiC, which severely limits the thermionic current. According to the Richardson-Dushman equation, the thermionic current should increase by more than six orders of magnitude if we cesiate both electrodes of the converter, increasing the efficiency accordingly. In our initial experiments, the thermionic current was enhanced by ~1.5 orders of magnitude using the cesium coating.
Keywords :
cathodes; energy conservation; microfabrication; silicon compounds; thermionic conversion; Richardson Dushman equation; cathode temperatures; electrical power; microfabricated silicon carbide; power 0.1 W; solar electricity generation; thermal cycling; thermionic energy converter; topping stages; Anodes; Cathodes; Heating; Optical device fabrication; Silicon; Silicon carbide; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
ISSN :
1084-6999
Print_ISBN :
978-1-4673-0324-8
Type :
conf
DOI :
10.1109/MEMSYS.2012.6170386
Filename :
6170386
Link To Document :
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