Title :
Effect of rapid thermal annealing on carrier lifetime in arsenic-ion-implanted GaAs
Author :
Ci-Ling Pan ; Gong-Ru Lin ; Wen-Chung Chen ; Feruz Ganikhanov ; Chang, C.-S.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Summary form only given. LT-GaAs, with subpicosecond photoexcited carrier lifetime is currently the premier material for fabricating ultrafast optoelectronic devices. An alternate arsenic-rich material arsenic-ion-implanted (As/sup +/ ion-implanted) GaAs has recently emerged. The structural and electrical characteristics of GaAs:As/sup +/ and low temperature (LT) GaAs are very similar. Photoexcited carrier lifetime as short as 300 fs in GaAs:As/sup +/ is obtained on ion implantation. The effect of the thermal annealing process on the lifetime of photoexcited carriers in GaAs:As/sup +/ is examined in this paper.
Keywords :
carrier lifetime; gallium arsenide; high-speed optical techniques; ion implantation; optoelectronic devices; photoexcitation; rapid thermal annealing; semiconductor device testing; LT-GaAs; arsenic-ion-implanted GaAs; carrier lifetime; rapid thermal annealing; subpicosecond photoexcited carrier lifetime; Charge carrier lifetime; Councils; Gallium arsenide; Rapid thermal annealing; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
