Title :
Measurement and interpretation of the high-frequency characteristics of InAlAs/InGaAs/InP MSM photodetectors
Author :
Mitra, Abhijit ; Jau-Wen Chen ; Micovic, M. ; Mayer, Theresa S. ; Miller, Douglas L. ; Das, M.B.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Summary form only given. In this paper, by matching experimental frequency-response characteristics of InAlAs-InGaAs-InP metal-semiconductor-metal (MSM) photodetectors with theoretical results based on an effective one dimensional velocity saturated carrier transport model, we demonstrate the relative importance of hole and electron carrier transit times and the dependence of the 3 dB bandwidth on the applied bias voltage.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; semiconductor device testing; InAlAs-InGaAs-InP MSM photodetectors; InAlAs-InGaAs-InP metal-semiconductor-metal photodetectors; frequency-response characteristics; high-frequency characteristics; one dimensional velocity saturated carrier transport model; Bandwidth; Capacitance; Charge carrier processes; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical buffering; Optoelectronic devices; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
