Femtosecond time-resolved stimulated emissions in ZnSe thin film studied by up-conversion at room temperature

Author

Wenji Peng ; Kim-Sing Wong ; Hong Wang ; Sou, I.K.

Author_Institution

Dept. of Phys., Hong Kong Univ. of Sci. Technol., Hong Kong

fYear

1996

fDate

2-7 June 1996

Firstpage

140

Lastpage

141

Abstract

Summary form only given. Semiconductor ZnSe and its heterostructure materials can be developed as blue color light-emitting diodes, lasers and high-speed optoelectronics devices. The investigation of emission time evolution in ZnSe can provide important information for the understanding of emission mechanism and the improvement of the device characteristics. In this paper, we studied the temporal behaviors of stimulated and spontaneous emissions in ZnSe thin film by using time-resolved sum-frequency technique (upconversion) in the femtosecond region.

Keywords

II-VI semiconductors; high-speed optical techniques; light emitting diodes; optical films; semiconductor lasers; semiconductor thin films; spontaneous emission; stimulated emission; time resolved spectroscopy; zinc compounds; ZnSe; ZnSe thin film; blue color light-emitting diodes; device characteristics; emission mechanism; emission time evolution; femtosecond region; femtosecond time-resolved stimulated emissions; heterostructure materials; high-speed optoelectronics devices; laser diodes; room temperature; semiconductor ZnSe; spontaneous emission; temporal behaviors; time-resolved sum-frequency technique; up-conversion; Light emitting diodes; Optical materials; Optoelectronic devices; Semiconductor lasers; Semiconductor materials; Semiconductor thin films; Stimulated emission; Temperature; Transistors; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864471