• DocumentCode
    3547390
  • Title

    Integrated carbon nanotube arrays for reliable contact in electromechanical memory device

  • Author

    Choi, Jungwook ; Eun, Youngkee ; Kim, Jongbaeg

  • Author_Institution
    Sch. of Mech. Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    1316
  • Lastpage
    1319
  • Abstract
    A reliable electromechanical memory device using aligned carbon nanotube (CNT) arrays as contact material has been developed. The aligned CNT arrays were integrated by chemical vapor deposition (CVD) on microstructures making mechanical contact. The contact showed hysteretic pull-out and - in behaviors which enabled on - and off-state readout, and the memory logic was programmed based on adhesive force between the CNT arrays and actuation of shuttle. On the basis of intimate interfacial contact between CNT arrays, and remarkable electrical and mechanical properties of CNT, the reliability experiment showed durable contact characteristic for over 1.1×106 cycles of 20 mA hot-switching operation.
  • Keywords
    carbon nanotubes; chemical vapour deposition; logic devices; mechanical contact; storage management chips; CVD; carbon nanotube arrays; chemical vapor deposition; electromechanical memory device; mechanical contact; memory logic; reliable contact; Carbon nanotubes; Contacts; Force; Logic gates; Reliability; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170400
  • Filename
    6170400