DocumentCode
3547390
Title
Integrated carbon nanotube arrays for reliable contact in electromechanical memory device
Author
Choi, Jungwook ; Eun, Youngkee ; Kim, Jongbaeg
Author_Institution
Sch. of Mech. Eng., Yonsei Univ., Seoul, South Korea
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
1316
Lastpage
1319
Abstract
A reliable electromechanical memory device using aligned carbon nanotube (CNT) arrays as contact material has been developed. The aligned CNT arrays were integrated by chemical vapor deposition (CVD) on microstructures making mechanical contact. The contact showed hysteretic pull-out and - in behaviors which enabled on - and off-state readout, and the memory logic was programmed based on adhesive force between the CNT arrays and actuation of shuttle. On the basis of intimate interfacial contact between CNT arrays, and remarkable electrical and mechanical properties of CNT, the reliability experiment showed durable contact characteristic for over 1.1×106 cycles of 20 mA hot-switching operation.
Keywords
carbon nanotubes; chemical vapour deposition; logic devices; mechanical contact; storage management chips; CVD; carbon nanotube arrays; chemical vapor deposition; electromechanical memory device; mechanical contact; memory logic; reliable contact; Carbon nanotubes; Contacts; Force; Logic gates; Reliability; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170400
Filename
6170400
Link To Document