DocumentCode :
3547452
Title :
Infrared difference-frequency generation with quasi-phase-matched GaAs
Author :
Lallier, E. ; Becouarn, L. ; Brevignon, M. ; Lehoux, J.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
507
Abstract :
Summary form only given. We report on a high-transmission GaAs stack and difference-frequency generation (DFG) experiments at 11.3 /spl mu/m using the signal and idler of a 1.06-/spl mu/m pumped lithium niobate optical parametric oscillator (OPO) as the pump source.
Keywords :
III-V semiconductors; gallium arsenide; infrared sources; optical frequency conversion; optical materials; optical parametric oscillators; optical pumping; 1.06 mum; 11.3 mum; 8 to 12 mum; GaAs; high-transmission GaAs stack; idler; infrared difference-frequency generation; lithium niobate optical parametric oscillator; optical pumping; pump source; quasi-phase-matched GaAs; signal; Electromagnetic wave absorption; Excitons; Gallium arsenide; Laser excitation; Optical pulse generation; Optical pumping; Physics computing; Planar waveguides; Resonance; Wavelength converters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676555
Filename :
676555
Link To Document :
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