DocumentCode
3547461
Title
16-micron infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs
Author
Zheng, Dongning ; Gordon, L.A. ; Fejer, M.M. ; Byer, Robert L. ; Vodopyanov, K.L.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fYear
1998
fDate
3-8 May 1998
Firstpage
507
Lastpage
508
Abstract
Summary form only given. We have fabricated low optical loss diffusion bonded stacked (DBS) GaAs and demonstrated that mid-infrared radiation as long as 17 /spl mu/m could be generated by difference frequency mixing with DBS GaAs.
Keywords
III-V semiconductors; diffusion; gallium arsenide; infrared sources; optical frequency conversion; optical materials; 16 mum; 17 mum; DBS GaAs; GaAs; difference frequency mixing; difference-frequency mixing; diffusion bonded stacked; diffusion-bonded-stacked; infrared generation; low optical loss; mid-infrared radiation; Electromagnetic wave absorption; Excitons; Gallium arsenide; Laser excitation; Optical pulse generation; Optical pumping; Physics computing; Planar waveguides; Resonance; Wavelength converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676556
Filename
676556
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