Title :
Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses
Author :
Pronko, P.P. ; Van Rompay, P.A. ; Horvath, C. ; Liu, X. ; Juhasz, T. ; Mourou, G.
Author_Institution :
Center for Ultrafast Opt. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. Data are presented that demonstrate electron production by avalanche ionization as the dominant mechanism for laser breakdown, and subsequent surface damage in silicon, for laser pulse durations in the range of 80 fs to 9 ns. Experiments are performed at 786 nm and 1.06 /spl mu/m exhibiting the correct wavelength dependence for an avalanche process.
Keywords :
avalanche breakdown; electron production; high-speed optical techniques; photoionisation; plasma production by laser; silicon; 1.06 mum; 786 nm; 80 fs to 9 ns; Si; avalanche ionization; avalanche process; correct wavelength dependence; dielectric breakdown; dominant mechanism; electron production; laser breakdown; laser pulse durations; silicon; surface damage; ultrafast laser pulse irradiation; Dielectric breakdown; Ionization; Laser ablation; Laser theory; Machining; Optical pulses; Optical scattering; Silicon; Surface emitting lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676562
