Design of an ultra-wideband low noise amplifier in 0.13 μm CMOS

Author

Wang, Yanxin ; Duster, Jon S. ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

5067

Abstract

A low noise amplifier (LNA) in 0.13 μm CMOS for ultra-wideband (UWB) front-ends is presented. The LNA has a peak gain of 11.3 dB and a 3.0-10.7 GHz -3 dB bandwidth. Its broadband matching is better than -10 dB for S11 and -15 dB for S22. Its lowest noise figure (NF) is 2.2 dB and the average NF is 3 dB. The LNA achieves NF_min performance over the entire bandwidth by using a power-constrained simultaneous noise and input matching concept. It consumes only 4.8 mW with a 1.2 V supply for the amplifier core and 1.6 mW in the output buffer. A comparison with recently published UWB LNAs shows this design has the best overall performance among both CMOS and SiGe designs.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; buffer circuits; integrated circuit design; integrated circuit noise; random noise; ultra wideband communication; wideband amplifiers; 0.13 micron; 1.2 V; 1.6 mW; 11.3 dB; 3 dB; 3.0 to 10.7 GHz; 4.8 mW; CMOS; LNA; SiGe designs; UWB front-ends; amplifier core; broadband matching; noise figure; output buffer; ultra-wideband low noise amplifier; Bandwidth; Broadband amplifiers; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465773

Filename

1465773