Ultra low power RF section of a passive microwave RFID transponder in 0.35 μm BiCMOS

Author

De Vita, Giuseppe ; Iannaccone, Giuseppe

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. degli Studi di Pisa, Italy

fYear

2005

fDate

23-26 May 2005

Firstpage

5075

Abstract

We present the design of the RF section of a long range passive RFID transponder. It consists of a voltage multiplier and a voltage regulator, that convert the RF signal into a regulated DC supply voltage, a PWM demodulator and a PSK backscatter modulator. The entire circuit has been designed with AMS 0.35 μm BiCMOS technology. Post-layout simulations show the correct operation of the whole section. The supply voltage generator, which provides a supply voltage of 0.6 V - appropriately regulated for the subthreshold CMOS logic to be used for the digital section - exhibits a power efficiency of 20% in the RF/DC conversion. Proper modulation and demodulation is obtained.

Keywords

BiCMOS analogue integrated circuits; demodulators; integrated circuit layout; low-power electronics; microwave integrated circuits; modulators; phase shift keying; pulse width modulation; radiofrequency identification; transponders; voltage multipliers; voltage regulators; 0.35 micron; 0.6 V; BiCMOS; PSK backscatter modulator; PWM demodulator; RF/DC conversion; digital section; long range passive microwave RFID transponder; modulation; power efficiency; regulated DC supply voltage; subthreshold CMOS logic; ultra low power RF section; voltage multiplier; voltage regulator; BiCMOS integrated circuits; Demodulation; Passive RFID tags; Phase shift keying; Pulse width modulation; Radio frequency; Radiofrequency identification; Regulators; Transponders; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465775

Filename

1465775