DocumentCode :
3547709
Title :
A 1.5V multirate multibit sigma delta modulator for GSM/WCDMA in a 90 nm digital CMOS process
Author :
Altun, Oguz ; Koh, Jinseok ; Allen, Phillip E.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
5577
Abstract :
A multirate multibit sigma delta modulator structure is used for low power A/D converter design for wireless applications. New integrator structures and a dedicated timing scheme are proposed for a very low power implementation. A dual-mode second order multirate multibit sigma delta modulator targeting GSM/WCDMA applications is designed. In Spice simulations, the prototype design achieves 71.4 dB peak signal-to-noise+distortion (SNDR) in the 200 kHz GSM band and dissipates 1.1 mA of total current from a 1.5 V supply. This dual-mode design also achieves 45.7 dB SNDR in the 1.94 MHz WCDMA band with 1.9 mA of total current consumption.
Keywords :
CMOS digital integrated circuits; cellular radio; integrating circuits; sigma-delta modulation; timing circuits; 1.1 mA; 1.5 V; 1.9 mA; 1.94 MHz; 200 kHz; 90 nm; GSM/WCDMA; SNDR; digital CMOS process; dual-mode design; integrator structures; low power A/D converter; multirate multibit sigma delta modulator; peak signal-to-noise+distortion; timing scheme; wireless applications; CMOS process; Digital modulation; GSM; Multiaccess communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465901
Filename :
1465901
Link To Document :
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