DocumentCode
3547805
Title
An advance RTL to GDS2 design methodology for 90 nm and below system LSIs to solve timing closure, signal integrity and design for manufacturing
Author
Nishiguchi, Nobuyuki
Author_Institution
Design Technol. Dev. Dept., STARC, Yokohama, Japan
fYear
2005
fDate
23-26 May 2005
Firstpage
5938
Abstract
An advanced design methodology for 90 nm and below system LSI is described. The methodology provides the total solution to solve timing closure, signal integrity issues and design for manufacturing in RTL to GDS2 silicon implementation. It also focuses on hierarchical and low power design implementation. Sign-off criteria to guarantee the first silicon success are presented. Also, the methodology is adapted for actual CPU RISC core design in 90 nm process technology, and the first silicon worked well as designed.
Keywords
circuit CAD; design for manufacture; integrated circuit design; large scale integration; logic design; low-power electronics; 90 nm; CPU RISC core design; EDA design environment; advanced design methodology; design for manufacturing; hierarchical design; low power design; sign-off criteria; signal integrity; system LSI; timing closure; Delay; Design for manufacture; Design methodology; Electronic design automation and methodology; Large scale integration; Manufacturing; Process design; Signal design; Silicon; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465991
Filename
1465991
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