• DocumentCode
    3547805
  • Title

    An advance RTL to GDS2 design methodology for 90 nm and below system LSIs to solve timing closure, signal integrity and design for manufacturing

  • Author

    Nishiguchi, Nobuyuki

  • Author_Institution
    Design Technol. Dev. Dept., STARC, Yokohama, Japan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    5938
  • Abstract
    An advanced design methodology for 90 nm and below system LSI is described. The methodology provides the total solution to solve timing closure, signal integrity issues and design for manufacturing in RTL to GDS2 silicon implementation. It also focuses on hierarchical and low power design implementation. Sign-off criteria to guarantee the first silicon success are presented. Also, the methodology is adapted for actual CPU RISC core design in 90 nm process technology, and the first silicon worked well as designed.
  • Keywords
    circuit CAD; design for manufacture; integrated circuit design; large scale integration; logic design; low-power electronics; 90 nm; CPU RISC core design; EDA design environment; advanced design methodology; design for manufacturing; hierarchical design; low power design; sign-off criteria; signal integrity; system LSI; timing closure; Delay; Design for manufacture; Design methodology; Electronic design automation and methodology; Large scale integration; Manufacturing; Process design; Signal design; Silicon; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465991
  • Filename
    1465991