DocumentCode :
3547810
Title :
Application of reverse-active npns for compact, wide-tuning fT-integration-based filters in SiGe HBT BiCMOS technology
Author :
Khumsat, Phanumas ; Worapishet, Apisak
Author_Institution :
Dept. of Electr. Eng., Prince of Songkhla Univ., Hat-Yai, Thailand
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
5954
Abstract :
The fT-integration principle is investigated in SiGe HBT 0.8 μm BiCMOS process through an implementation of wide frequency tuning 5-GHz biquadratic filters. The techniques formerly employed in Si fT-integrators, including the circuit structures and the use of lateral pnp as well as vertical npn operating in a reverse-active mode for wide tuning, are successfully demonstrated in a SiGe HBT process. The prototype filters achieves a center frequency tuning from 1.9 GHz to 6.7 GHz (over 300%) and SFDR of 30 dB and 33 dB for the corresponding Q of 10 and 5 respectively at a 1.8-V supply. The vertical reverse-active tuning npn structures help save chip area by four times over the use of lateral pnp structures, while overall performance is still preserved.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; Q-factor; UHF filters; active filters; circuit tuning; heterojunction bipolar transistors; integrated circuit design; microwave filters; 0.8 micron; 1.8 V; 1.9 to 6.7 GHz; HBT BiCMOS technology; Q-factor; SiGe; active filtering; biquadratic filters; circuit structures; fT-integration principle; integrated filter; reverse-active npn; silicon-germanium; wide frequency tuning filters; Active filters; BiCMOS integrated circuits; Circuit optimization; Electronic mail; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave filters; Silicon germanium; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465995
Filename :
1465995
Link To Document :
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