• DocumentCode
    3547865
  • Title

    A 4-bit 5 GS/s flash A/D converter in 0.18 μm CMOS

  • Author

    Sheikhaei, Samad ; Mirabbasi, Shahriar ; Ivanov, Andre

  • Author_Institution
    Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    6138
  • Abstract
    A 4-bit 5 GS/s flash analog-to-digital converter (ADC) is designed and simulated in a 0.18 μm CMOS technology. Low-swing operation both in the analog and the digital circuitry results in high-speed low power operation. The ADC dissipates 70 mW power from a 1.8 V supply while operating at 5 GHz. Offset averaging is used to minimize the effect of comparator offsets. Simulation results show that offset voltages with 67 mV standard deviation (i.e., 1 LSB) can be tolerated. Static INL and DNL errors are 0.34 LSB and 0.24 LSB respectively, and the ENOB is 3.65 bits. The simulation results of this non-time-interleaved flash ADC demonstrates a significant improvement in terms of power and area compared to those of previously reported ADCs.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; comparators (circuits); low-power electronics; 0.18 micron; 1.8 V; 5 GHz; 70 mW; ADC; CMOS; ENOB; comparator offset effect minimization; flash A/D converter; high-speed low power operation; low-swing operation; nontime-interleaved flash ADC; offset averaging; static DNL errors; static INL errors; Analog-digital conversion; CMOS technology; Calibration; Circuit simulation; Laser radar; Latches; Resistors; Sampling methods; Signal generators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1466041
  • Filename
    1466041