Ultrafast response times and enhanced optical nonlinearity in beryllium-doped low-temperature-grown GaAs

Author

Prasad, Athul ; Haiml, M. ; Jung, I.D. ; Kunde, J. ; Morier-Genoud, Francois ; Weber, E.R. ; Stegner, U. ; Keller, Ulrich

Author_Institution

Inst. of Quantum Electron., Fed. Inst. of Technol., Zurich, Switzerland

fYear

1998

fDate

3-8 May 1998

Firstpage

535

Lastpage

536

Abstract

Summary form only given. We demonstrate that beryllium doping of low temperature-grown (LT) GaAs considerably shortens the initial decay time of the nonlinear absorption to values of about 100 fs. Be doping of LT GaAs improves the time response, the absorption modulation, and the nonsaturable losses.

Keywords

III-V semiconductors; beryllium; gallium arsenide; high-speed optical techniques; optical losses; optical materials; optical saturable absorption; optical switches; 100 fs; GaAs:Be; absorption modulation; beryllium doping; beryllium-doped low-temperature-grown GaAs; enhanced optical nonlinearity; initial decay time; low temperature-grown GaAs; nonlinear absorption; nonsaturable losses; time response; ultrafast response times; Absorption; Delay; Doping; Energy measurement; Gallium arsenide; Plasmons; Reflectivity; Time factors; Tunneling; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676597

Filename

676597