Title :
Two-photon absorption coefficient and refractive-index changes in low-temperature-grown GaAs
Author :
Luka, H.S. ; Benjamin, Seldon D. ; Smith, P.W.E.
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Abstract :
Summary form only given. We have measured a large two photon absorption (TPA) coefficient in LT-GaAs indicating that this material could be used to advantage in optical limiting and autocorrelation devices based on TPA. By using the refractive-index change and TPA coefficient dependence on growth and annealing temperatures, we can tailor the material to maximize the figures of merit for all optical switching devices.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; optical correlation; optical limiters; optical switches; refractive index; semiconductor growth; GaAs; LT-GaAs; TPA coefficient; all optical switching devices; annealing temperatures; autocorrelation devices; figures of merit; growth temperatures; large two photon absorption coefficient; low-temperature-grown GaAs; optical limiting; refractive-index change; refractive-index changes; two-photon absorption coefficient; Absorption; Charge carrier lifetime; Doping; Electrons; Excitons; Gallium arsenide; Indium gallium arsenide; Materials science and technology; Temperature; Time factors;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676599
