Nondegenerate Four-Wave Mixing in a Dual-Mode Injection-Locked InAs/InP(100) Nanostructure Laser

Author

Cheng Wang ; Grillot, F. ; Fan-Yi Lin ; Aldaya, Ivan ; Batte, Thomas ; Gosset, C. ; Decerle, Etienne ; Even, J.

Author_Institution

LTCI, Telecom ParisTech, Paris, France

Volume

6

Issue

1

fYear

2014

fDate

Feb. 2014

Firstpage

1

Lastpage

8

Abstract

The nondegenerate four-wave mixing (NDFWM) characteristics in a quantum-dot Fabry-Perot laser are investigated, employing the dual-mode injection-locking technique. The solitary laser features two lasing peaks, which provides the possibility for efficient FWM generation. Under optical injection, the NDFWM is operated up to a detuning range of 1.7 THz with a low injection ratio of 0.42. The normalized conversion efficiency (NCE) and the side-mode suppression ratio (SMSR) with respect to the converted signal are analyzed. The highest NCE of -17 dB associated with a SMSR of 20.3 dB is achieved at detuning of 110 GHz.

Keywords

III-V semiconductors; indium compounds; laser mode locking; laser tuning; multiwave mixing; nanophotonics; quantum dot lasers; InAs-InP; NCE; NDFWM; SMSR; bandwidth 1.7 THz; bandwidth 110 GHz; detuning; dual-mode injection-locked InAs-InP nanostructure laser; dual-mode injection-locking; nondegenerate four-wave mixing; normalized conversion efficiency; optical injection; quantum dot Fabry-Perot laser; side-mode suppression ratio; Fiber lasers; Laser mode locking; Optical fibers; Optical pumping; Pump lasers; Semiconductor lasers; Quantum dot laser; four-wave mixing; injection locking;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2295473

Filename

6690207