Advances in oxide-confined vertical cavity lasers

Author

Choquette, Kent D. ; Schneider, R.P. ; Lear, K.L. ; Geib, Kent M. ; Hou, H.Q. ; Chui, H.C. ; Hagerott Crawford, M. ; Chow, W.W.

Author_Institution

Photonics Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

203

Lastpage

204

Abstract

Summary form only given. During the 1995/1996 significant performance advances have been achieved in, selectively oxidized vertical cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. These oxidized VCSEL structures take advantage of the high oxidation selectivity of AlGaAs and the capability of forming buried oxide layers within the epilayers of the laser. Here we review the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mirrors; optical fabrication; oxidation; refractive index; semiconductor lasers; semiconductor technology; surface emitting lasers; AlGaAs; buried oxide layers; device fabrication; epilayers; high oxidation selectivity; oxide-confined vertical cavity lasers; oxidized VCSEL structures; review; selectively oxidized vertical cavity surface emitting lasers; Apertures; Dielectric losses; Distributed Bragg reflectors; Mirrors; Optical device fabrication; Plugs; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864564