DocumentCode
354832
Title
High-power selectively oxidized vertical-cavity surface-emitting lasers
Author
Weigl, B. ; Reiner, G. ; Grabherr, M. ; Ebeling, K.J.
Author_Institution
Dept. of Optoelectronics, Ulm Univ., Germany
fYear
1996
fDate
2-7 June 1996
Firstpage
204
Abstract
Summary form only given. We have demonstrated MBE-grown oxidized InGaAs QW VCSELs combining both high output power and high conversion efficiency. Applications for these devices are foreseen in large two-dimensional arrays for optical pump sources.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical pumping; quantum well lasers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; InGaAs; MBE-grown; high conversion efficiency; high output power; high-power selectively oxidized vertical-cavity surface-emitting lasers; large two-dimensional arrays; optical pump sources; oxidized InGaAs QW VCSELs; Apertures; Dielectric losses; Optical pumping; Optical scattering; Optical surface waves; Power generation; Stimulated emission; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864565
Link To Document