Title :
Comprehensive analysis and optimization of CMOS LNA noise performance
Author :
Feng, Dong ; Shi, Bingxue
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Comprehensive analysis of CMOS low noise amplifier (LNA) noise performance is presented in this paper, including channel noise and induced gate noise in MOS devices. The impacts of distributed gate resistance and intrinsic channel resistance on noise performance are also considered and formulized. A new analytical formula for noise figure is proposed. Two kinds of noise optimization approaches are performed. This work will benefit the design of high performance CMOS LNA.
Keywords :
CMOS integrated circuits; amplifiers; integrated circuit noise; optimisation; CMOS low noise amplifier; MOS devices; channel noise; distributed gate resistance; gate noise; intrinsic channel resistance; noise figure; noise optimization; noise performance; CMOS process; Circuit noise; Impedance matching; Low-noise amplifiers; Microelectronics; Noise figure; Partial response channels; Performance analysis; Performance gain; Radio frequency;
Conference_Titel :
Design Automation Conference, 2005. Proceedings of the ASP-DAC 2005. Asia and South Pacific
Print_ISBN :
0-7803-8736-8
DOI :
10.1109/ASPDAC.2005.1466558
