Semi-insulating Te-saturated CdTe

Author

Grill, R. ; Franc, J. ; Höschl, P. ; Turkevych, I. ; Belas, E. ; Moravec, P.

Author_Institution

Inst. of Phys., Charles Univ., Prague

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4322

Lastpage

4326

Abstract

The evolution of defect structure and self-compensation is studied theoretically within quasi-chemical formalism in undoped and donor-doped Te-saturated CdTe during the cooling in temperature interval 700-100degC. We show that proper thermal treatment, which includes low temperature (cca 200degC) dwell, allows to prepare semi-insulating CdTe with deep level doping below the limit 10¹³ cm^-3, which is demanded in detector industry. New high-temperature transport data are used to refine on previous native defect properties for the modelling and variant defect models are analyzed. Diffusion rates at lowered temperature are annotated to approve the model for real-time experimental verification

Keywords

II-VI semiconductors; cadmium compounds; carrier density; deep levels; diffusion; point defects; semiconductor counters; 700 to 100 C; CdTe; carrier density; cooling; deep level doping; defect properties; defect structure; detector industry; diffusion rates; donor-doped Te-saturated CdTe; high-temperature transport data; point defects; quasichemical formalism; real-time experimental verification; self-compensation; semiinsulating Te-saturated CdTe; thermal treatment; Annealing; Charge carrier density; Cooling; Crystalline materials; Doping; Physics; Quasi-doping; Semiconductor process modeling; Temperature; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466844

Filename

1466844