Growth of thick CdTe films by close-space-sublimation technique

Author

Nagayoshi, H. ; Suzuki, K.

Author_Institution

Dept. of Electron. Eng., Tokyo Nat. Coll. of Technol.

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4411

Lastpage

4414

Abstract

High resistivity CdTe thick films (50 to 300 mum) have been deposited by using close-space-sublimation technique with very high growth rate of about 5-10 mum/min. In certain deposition conditions, bulk-like free-standing thick films are obtained. The resistivity of deposited films is in the order of 10¹⁰ Omegam without any intentional doping. The current voltage characteristic shows a typical space charge limited behavior at bias voltages higher than 1 V. The effective hole mobility of 0.2 cm²/Vs is estimated. In addition, the films show clear photo-response to short laser pulse excitation, indicating feasibility for X-ray imaging devices

Keywords

II-VI semiconductors; X-ray imaging; cadmium compounds; electrical resistivity; hole mobility; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; space charge; sublimation; CdTe; X-ray imaging devices; bias voltages; bulk-like free-standing thick films; close-space-sublimation technique; current voltage characteristic; deposited films; doping; effective hole mobility; high resistivity CdTe thick films; photoresponse; short laser pulse excitation; space charge limited behavior; Conductivity; Current-voltage characteristics; Doping; Laser excitation; Optical pulses; Space charge; Thick films; Voltage; X-ray imaging; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466863

Filename

1466863