The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Author

Park, Y.J. ; Na, Y.H. ; Kim, S.U. ; Kim, Ki Hyun ; Jung, T.R.

Author_Institution

Dept. of Appl. Phys., Korea Univ., Seoul

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4425

Lastpage

4427

Abstract

Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resistivity (5times10 ⁹ Omegamiddotcm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl: 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350~500 degC. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.

Keywords

II-VI semiconductors; cadmium compounds; chlorine; electrical resistivity; grain size; graphite; semiconductor doping; semiconductor growth; CdZnTe:Cl; Cl-doped polycrystalline CdZnTe thick film growth; grain size; polished graphite substrate; thermal evaporation method; Conductivity; Grain size; Helium; Leakage current; Radiation detectors; Substrates; Temperature measurement; Thick films; X-ray imaging; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466866

Filename

1466866